ds30110 rev. 7 - 2 1 of 4 mmdt4403 www.diodes.co m ? diodes incorporated epitaxial planar die construction ideal for low power amplification and swi tching ultra-small surface mount package lead free /rohs co mpliant (note 3 ) features a m j l d b c h k g f c 1 b 2 e 2 e 1 b 1 c 2 mechanical data mmdt4403 dual pnp small si gnal surface m ount transi stor characteristic symbol mmdt4403 unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -5.0 v collector current - continuous ( note 1) i c -600 ma power dissipation (note 1, 2) p d 200 mw thermal resistance, j unction to ambient (note 1) r q ja 625 c/w operating and storage and temperature range t j , t stg -55 to +150 c maximum ratings @ t a = 25 c unless otherwise s pecified sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j ? 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 a 0 8 all dimensions in m m notes: 1. device m ounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as show n on diodes inc. suggested pad layout document ap02001, which can be found on our website at http:/ /www.diodes.com/datasheets/ap02001.pdf. 2. maximum c ombined dissipation. 3. no purposefully added lead. e 2 b 2 e 1 c 2 b 1 c 1 case: sot-363 case material: molded pl astic. ul flamm ability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminals: solderable per mil-std-202, method 208 lead free plating (matte tin finish annealed over alloy 42 leadframe). terminal connections: see diagram marking (see page 2): k2t ordering & date code information: see page 2 weight: 0.006 grams (approx.)
ds30110 rev. 7 - 2 2 of 4 mmdt4403 www.diodes.co m electri cal character isti cs @ t a = 25 c unless otherwise s pecified characteristic symbol min max unit test condition off characteristics (note 4) collector-base breakdown voltage v (br) cbo -40 ? v i c = -100 m a, i e = 0 collector-emitter breakdown voltage v (br)ceo -40 ? v i c = -1.0ma, i b = 0 emitter-base breakdown voltage v (br) ebo -5.0 ? v i e = -100 m a, i c = 0 collector cutoff current i cex ? -100 na v ce = -35v, v eb (off) = -0.4v base cutoff current i bl ? -100 na v ce = -35v, v eb (off) = -0.4v on characteristics (note 4) dc current gain h fe 30 60 100 100 20 ? ? ? 300 ? ? i c = -100a, v ce = -1.0v i c = -1.0ma, v ce = -1.0v i c = -10ma, v ce = -1.0v i c = -150ma, v ce = -2.0v i c = -500ma, v ce = -2.0v collector-emitter saturation voltage v ce (sat) ? -0.40 -0.75 v i c = -150ma, i b = -15ma i c = -500ma, i b = -50ma base-emitter saturation voltage v be (sat) -0.75 ? -0.95 -1.30 v i c = -150ma, i b = -15ma i c = -500ma, i b = -50ma small signal characteristics output capacitance c cb ? 8.5 pf v cb = -10v, f = 1.0mhz, i e = 0 input capacitance c eb ? 30 pf v eb = -0.5v, f = 1.0mhz, i c = 0 input impedance h ie 1.5 15 k w v ce = -10v, i c = -1.0ma, f = 1.0khz voltage feedback ratio h re 0.1 8.0 x 10 -4 small si gnal current gain h fe 60 500 ? output admittance h oe 1.0 100 m s current gain-bandwidth product f t 200 ? mhz v ce = -10v, i c = -20ma, f = 100mhz switching characteristics delay time t d ? 15 ns v cc = -30v, i c = -150ma, v be (off) = -2.0v, i b1 = -15ma rise time t r ? 20 ns storage time t s ? 225 ns v cc = -30v, i c = -150ma, i b1 = i b2 = -15ma fall t ime t f ? 30 ns orderi ng inform ation (note 5) device packaging shipping MMDT4403-7-F sot-363 3000/tape & reel notes: 4. short durat ion test pulse used to minimize self-heating effect. 5. for packaging details, go to our website at http: //www.diodes.com/datasheets/ap02007.pdf . marking i nformat ion k 2 t k 2 t y m y m k2t= product type mark ing code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september date code key year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 code j k l m n p r s t u v w month jan feb march apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d
ds30110 rev. 7 - 2 3 of 4 mmdt4403 www.diodes.co m 0 50 100 25 50 75 100 125 150 175 200 p , p o w e r d i s s i p a t i o n ( m w ) d t , amb ient temp era ture (c) a fig. 1 , max power dissip ation v s ambie nt t emper ature 150 200 250 0 1 1 0 1 0 0 1 0 0 0 v , c o l l e c t o r t o e m i t t e r c e ( s a t ) s a t u r a t i o n v o l t a g e ( v ) i , c o l l e c t o r c u r r e n t ( m a ) c f ig . 2 c o ll e c t o r e m it t e r s a t u r a t io n v o lt a g e v s . c o ll e c t o r c u r r e n t t = 2 5 c a t = 5 0 c a t = 1 5 0 c a 0 0 .1 0 .2 0 .3 0 .4 0 .5 i c i b = 1 0 1 100 1000 1 10 100 1000 h , d c c u r r e n t g a i n ( n o r m a l i z e d ) f e i , col lect or cu rren t (ma) c fig. 4 dc c urrent gain vs. co llector curre nt 10 v = 5v ce t = 25 c a t = -50 c a t = 150 c a 0.1 1 10 100 v , b a s e e m i t t e r v o l t a g e ( v ) b e ( o n ) i , collect or current (ma) c fig. 3 base-emitter v olt age vs. collector current t = 25c a t = -50c a v = 5v ce t = 150c a 0.2 0.3 0.4 0.5 0.9 0.8 0.7 0.6 1000 1 .0 5 .0 2 0 1 0 3 0 -0 .1 -1 0 -1 .0 -3 0 c a p a c i t a n c e ( p f ) r e v e r s e v o l t s ( v ) f ig . 6 t y p ic a l c a pa c ita n c e c ob o c ib o 1 100 1000 1 10 100 f , g a i n b a n d w i d t h p r o d u c t ( m h z ) t i , colle ct or cur rent (ma) c fig. 5 ga in bandw idth product vs. coll ector cur rent 10 v = 5v ce
ds30110 rev. 7 - 2 4 of 4 mmdt4403 www.diodes.co m i b a s e c u r r e n t ( m a ) b , f i g . 7 t y p i c a l c o l l e c t o r s a t u r a t i o n r e g i o n v c o l l e c t o r - e m i t t e r v o l t a g e ( v ) c e , 0 . 0 0 1 0 . 0 1 0 0 . 2 0 . 4 0 . 6 0 . 8 1 . 0 1 . 2 1 . 4 1 . 6 0 . 1 1 1 0 1 0 0 i = 1 m a c i = 1 0 m a c i = 3 0 m a c i = 1 0 0 m a c i = 3 0 0 m a c i m p o r t a n t n o t i c e d i o d e s , i n c . a n d i t s s u b s i d i a r i e s r e s e r v e t h e r i g h t t o m a k e c h a n g e s w i t h o u t f u r t h e r n o t i c e t o a n y p r o d u c t h e r e i n t o m a k e c o r r e c t i o n s , m o d i f i c a t i o n s , e n h a n c e - m e n t s , i m p r o v e m e n t s , o r o t h e r c h a n g e s . d i o d e s , i n c . d o e s n o t a s s u m e a n y l i a b i l i t y a r i s i n g o u t o f t h e a p p l i c a t i o n o r u s e o f a n y p r o d u c t d e s c r i b e d h e r e i n ; n e i t h e r d o e s i t c o n v e y a n y l i c e n s e u n d e r i t s p a t e n t r i g h t s , n o r t h e r i g h t s o f o t h e r s . t h e u s e r o f p r o d u c t s i n s u c h a p p l i c a t i o n s s h a l l a s s u m e a l l r i s k s o f s u c h u s e a n d w i l l a g r e e t o h o l d d i o d e s i n c o r p o r a t e d a n d a l l t h e c o m p a n i e s w h o s e p r o d u c t s a r e r e p r e s e n t e d o n o u r w e b s i t e , h a r m l e s s a g a i n s t a l l d a m a g e s . l i f e s u p p o r t t h e p r o d u c t s l o c a t e d o n o u r w e b s i t e a t w w w . d i o d e s . c o m a r e n o t r e c o m m e n d e d f o r u s e i n l i f e s u p p o r t s y s t e m s w h e r e a f a i l u r e o r m a l f u n c t i o n o f t h e c o m p o n e n t m a y d i r e c t l y t h r e a t e n l i f e o r c a u s e i n j u r y w i t h o u t t h e e x p r e s s w r i t t e n a p p r o v a l o f d i o d e s i n c o r p o r a t e d .
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